CONFIRMED INVITED SPEAKERS

(as per 15 December 2016)

Shizuo Fujita, Univ. of Kyoto, Japan

CVD of different Ga2O3 polymorphs and their applications

Klaus Irmscher, IKZ Berlin, Germany

Doping and defects in beta-Ga2O3

Gregg Jessen, Air Force Research Lab., Wright-Patterson AFB, USA

Development of lateral Ga2O3 FETs for RF and switch applications

Akito Kuramata, Tamura Corp. & Novel Crystal Technol., Saitama, Japan

Recent progress in EFG growth of Ga2O3

Hartwin Peelaers, Univ. California Santa Barbara, USA

First-principles modeling of sesquioxide semiconductors

Steven Ringel, Ohio State University, USA

Investigation of deep levels in beta-Ga2O3

Man Hoi Wong, NICT, Tokyo, Japan

Advances in processing and design strategies for Ga2O3 MOSFETs

Dong-Sing Wuu, National Chung Hsing University, Taiwan

Pulsed laser deposition of aluminum gallium oxides for deep-UV detector applications

NOTE: Based on their novelty and abstract clarity few contributed papers could be selected for upgrade to invited talks.